hexfet ? power mosfet 12/03/10 IRF7328PBF absolute maximum ratings www.irf.com 1 thermal resistance parameter max. units r ja maximum junction-to-ambient 62.5 c/w parameter max. units v ds drain-source voltage -30 v i d @ t a = 25c continuous drain current, v gs @ -10v -8.0 i d @ t a = 70c continuous drain current, v gs @ -10v -6.4 a i dm pulsed drain current -32 p d @t a = 25c maximum power dissipation 2.0 w p d @t a = 70c maximum power dissipation 1.3 w linear derating factor 16 mw/c v gs gate-to-source voltage 20 v t j , t stg junction and storage temperature range -55 to + 150 c new trench hexfet ? power mosfets from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management applications. trench technology ultra low on-resistance dual p-channel mosfet available in tape & reel lead-free description pd - 95196a d1 d1 d2 d2 g1 s2 g2 s1 top view 8 1 2 3 4 5 6 7 so-8 v dss r ds(on) max i d -30v 21m ? @v gs = -10v -8.0a 32m ? @v gs = -4.5v -6.8a
2 www.irf.com parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) showing the i sm pulsed source current integral reverse (body diode) p-n junction diode. v sd diode forward voltage ??? ??? -1.2 v t j = 25c, i s = -2.0a, v gs = 0v t rr reverse recovery time ??? 37 56 ns t j = 25c, i f = -2.0a q rr reverse recovery charge ??? 36 54 nc di/dt = -100a/s source-drain ratings and characteristics -32 2.0 parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage -30 ??? ??? v v gs = 0v, i d = -250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? -0.018 ??? v/c reference to 25c, i d = -1ma ??? 17 21 v gs = -10v, i d = -8.0a 26.8 32 v gs = -4.5v, i d = -6.8a v gs(th) gate threshold voltage -1.0 ??? -2.5 v v ds = v gs , i d = -250a g fs forward transconductance 12 ??? ??? s v ds = -10v, i d = -8.0a ??? ??? -15 v ds = -24v, v gs = 0v ??? ??? -25 v ds = -24v, v gs = 0v, t j = 70c gate-to-source forward leakage ??? ??? -100 v gs = -20v gate-to-source reverse leakage ??? ??? 100 v gs = 20v q g total gate charge ??? 52 78 i d = -8.0a q gs gate-to-source charge ??? 9.8 ??? nc v ds = -15v q gd gate-to-drain ("miller") charge ??? 8.3 ??? v gs = -10v t d(on) turn-on delay time ??? 13 20 v dd = -15v, v gs = -10.0v t r rise time ??? 15 23 i d = -1.0a t d(off) turn-off delay time ??? 198 297 r g = 6.0 ? t f fall time ??? 98 147 r d = 15 ? c iss input capacitance ??? 2675 ??? v gs = 0v c oss output capacitance ??? 409 ??? pf v ds = -25v c rss reverse transfer capacitance ??? 262 ??? ? = 1.0mhz electrical characteristics @ t j = 25c (unless otherwise specified) i gss m ? r ds(on) static drain-to-source on-resistance i dss drain-to-source leakage current repetitive rating; pulse width limited by max. junction temperature. pulse width 400s duty cycle
surface mounted on fr-4 board, 10sec s d g
www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -10v -8.0a 0.1 1 10 100 2.0 3.0 4.0 5.0 6.0 v = -15v 20s pulse width ds -v , gate-to-source voltage (v) -i , drain-to-source current (a) gs d t = 25 c j t = 150 c j 0.1 1 10 100 -v ds , drain-to-source voltage (v) 0.1 1 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) -2.7v 20s pulse width tj = 25c vgs top -10.0v -5.0v -4.5v -4.0v -3.5v -3.3v -3.0v bottom -2.7v 0.1 1 10 100 -v ds , drain-to-source voltage (v) 0.1 1 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) -2.7v 20s pulse width tj = 150c vgs top -10.0v -5.0v -4.5v -4.0v -3.5v -3.3v -3.0v bottom -2.7v
4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 10 20 30 40 50 60 0 2 4 6 8 10 12 14 q , total gate charge (nc) -v , gate-to-source voltage (v) g gs i = d -8a v = -15v ds v = -24v ds 0.1 1 10 100 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 -v ,source-to-drain voltage (v) -i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 1000 0.1 1 10 100 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j c -v , drain-to-source voltage (v) -i , drain current (a) i , drain current (a) ds d 100us 1ms 10ms 1 10 100 0 1000 2000 3000 4000 -v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss
www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. case temperature 25 50 75 100 125 150 0.0 2.0 4.0 6.0 8.0 10.0 t , case temperature ( c) -i , drain current (a) c d 0.1 1 10 100 1000 0.0001 0.001 0.01 0.1 1 10 100 1000 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
1
0.1 %
+ - v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms fig 10a. switching time test circuit t a
6 www.irf.com fig 13. typical on-resistance vs. drain current fig 12. typical on-resistance vs. gate voltage fig 14b. gate charge test circuit fig 14a. basic gate charge waveform q g q gs q gd v g charge d.u.t. v ds i d i g -3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 -v gs, gate -to -source voltage (v) 0.000 0.010 0.020 0.030 0.040 0.050 0.060 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) i d = -8.0a 0 10203040506070 -i d , drain current ( a ) 0.000 0.025 0.050 0.075 0.100 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) vgs = -4.5v vgs = -10v
www.irf.com 7 so-8 package outline dimensions are shown in milimeters (inches) e1 d e y b a a1 h k l .189 .1497 0 .013 .050 bas ic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 bas ic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 min max millimeters inches min max dim 8 e c .0075 .0098 0.19 0.25 .025 bas ic 0.635 bas ic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] c a b e1 a a1 8x b c 0.10 [.004] 4 3 12 footprint 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 4. outline conforms to jedec outline ms-012aa. not e s : 1. dimens ioning & t ole rancing pe r as me y14.5m-1994. 2. cont rol ling dime ns ion: mil l imet e r 3. dimens ions are s hown in mill ime t ers [inches ]. 5 dimens ion does not include mol d prot rus ions . 6 dimens ion does not include mol d prot rus ions . mold prot rus ions not to e xcee d 0.25 [.010]. 7 dimens ion is t he l engt h of l e ad f or s ol de ring t o a s u b s t r at e . mold prot rus ions not to e xcee d 0.15 [.006]. 8x 1.78 [.070] so-8 part marking information (lead-free) dat e code (yww) xxxx international rectifier logo f7101 y = l as t digit of t he ye ar part number lot code ww = we e k example: t his is an irf 7101 (mos f et ) p = de s i gn at e s l e ad- f r e e product (optional) a = assembly site code
8 www.irf.com 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reel dimensions are shown in milimeters (inches) data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualifications standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 12/2010
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